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COM43T4115VTX Datasheet

SYMBOL PARAMETER CONDTIONS NOTES PIN- NAME MIN MAX UNT SUB- GROUPS
CCH Supply Current vcc=5 . 5V, VINH=5 . 5V, VIhIL=O . OV l 4 vcc 250.0 uA 1, 2, 3
CCL Supply Current vcc=5 . 5V, VIhIH=5 . 5V, VIhIL=O . oV l 4 vcc 30.0 mA 1, 2, 3
ccz Supply Current vcc=5 . 5V, VINH=5 . 5V, VIhIL=O . OV l 4 vcc 250.0 uA 1, 2, 3
CCT Supply Current per Input VCC=5.5V, OE=O.OV Input under test=3. 4V Other inputs=5. 5V or 0. OV l 4 vcc 2.5 mA 1, 2, 3
VCC=5.5V, OE=3.4V Other inputs=5.5V or 0. OV l 4 vcc 2.5 mA 1, 2, 3
H High Level Input Current VCC=5.5V, VIhIH=5.5V l 4 N 2.0 uA 1, 2, 3
L Low Level Input Current VCC=5.5V, VIhIL=O.OV l 4 N -2.0 uA 1, 2, 3
OZH Maximum TRI-STATE Leakage Current HIGH VCC=5. 5V, VOUT=2 . 7V VINL=O . OV, VIH (OE) =2. OV l 4 OUT 10.0 uA 1, 2, 3
OZL Maximum TRI-STATE Leakage Current LOW VCC=5. 5V, VOUT=O . 5V VIhIH=5. 5V, VIH (OE) =2. OV l 4 OUT -10.0 uA 1, 2, 3
CEX Output High Leakage Current VCC=5.5V, VOUT=5.5V VIhIH=5.5V l 4 OUT 50.0 uA l 2 3
05 Output Short Circuit Current VCC=5.5V, VOUT=O.OV VIhIH=5.5V 1, 4, 1 0 OUT -10 0 -275 mA 1, 2, 3
051 Output Short Circuit Current VCC=5.5V, VOUT=2.5V VINH=5.5V 1, 4 1 0 OUT -50 -18 0 mA 1, 2, 3
BV Input High Current Breakdown Test VCC=5. 5V, VIhIH=7 . OV l 4 N 7.0 uA 1, 2, 3
ZZ Bus Drainage Test vcc=o . OV, VOUT=4 . SV, VIhIL=O . oV l 4 hI/OUT -10 0 1 0 0 uA 1, 2, 3
VOL Low Level Output Voltage VCC=4 . 5V, IOL=4 8 . OmA, VIhIH=4 . 5V, VIhIL=O . OV, VIH=2 . OV, VIL=O . 8V l 4 OUT 0.55 V l 2 3
VOH High Level Output Voltage VCC=4 . 5V, IOH=-24 . OmA, VIhIH=4 . 5V, VINL=O . OV, VIH=2 . OV, VIL=O . 8V l 4 OUT 2.0 V 1, 2, 3
VCC=4 . 5V, IOH=-3mA, VIhIH=4 . 5V, VIhIL=O . OV, VIH=2 . OV, VIL=O . 8V l 4 OUT 2.5 V l 2 3
vcc=5 . OV, IOH=-3mA, VIhIH=5 . OV, VINL=O . OV, VIH=2 . OV, VIL=O . 8V l 4 OUT 3.0 V 1, 2, 3


COM43T4115VTX Price

Tc= -550C
-
f f? _ - ___ - I 150c
1250C
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0


COM43T4115VTX on stock
Each block of lKx8 consists of 256 rows and 4 columns. The address lines AO-A7 decode row selection and A8-A9 lines decode column selection. This scheme facilitates a relatively uniform distribution of cycles across the rows of a block. By allowing the address LSBs to decode row selection, the user avoids applying multiple cycles to the same row when accessing sequential data. For example, 256 bytes can be accessed sequentially without accessing the same row twice. In this example, one cycle would be applied to each row. An entire block of lKx8 can be read or written with only four cycles applied to each row. Figure 3 illustrates the organization within a memory block.

VDD V TYPICAL FORMULA FOR P (ccVV)
Dynamic power dissipation per package (P) 5 10 15 1 100 fi +* (fo CL) x VDD2 4 900 fi +* (fo CL) x VDD2 14 400 fi +* (fo CL) x VDD2 where fi = input freq. (MHz) fo = output freq. (MHz) CL = load capacitance (pF) ~ (foCu) = sum of outputs VDD = supply voltage (V)


VDD fCLY = 5v =4MH2
ll__ ¨l¨ 1_U.k _ l L_ I-- Jbl
Tnl_1 trl- 11 1 P


( 8 P ) O S I A I u ! P O J a i V k O d a l q q S t . u n t . u ! x P I A I ( 8 P ) O V I A I u ! P O J a i V k O d a l q e I ! P A y L u n L u ! x P I A I ( 8 P ) J a L Z s l u ! P O J a / V \ O d u o ! a s u l
o o o o o o o o o C . J a D - t o ( D C . J C O - r o i a J a J ( \ J r r ( A t . u ) 0 V I l O A l t l O d O t j O

Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
1800 0 020 0 015 Tj= Tj max
1200 0 024 0 025
90 0 0 031 0 034 K/W
60 0 0 045 0 047
30 0 0 077 0 077


I Features O High avalanche energy capacity O High electrostatic breakdown voltage O No secondary breakdown O High breakdown voltage, large allowable power dissipation O Allowing Low-voltage drive I Applications O Contactless relay O Diving circuit for a solenoid O Driving circuit for a motor O Control equipment O Switching power supply